Key facts
- Brand
- Fairchild
- Model
- FQPF14N30
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-09
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Fairchild FQPF14N30 MOSFET Datasheet
The FQPF14N30 MOSFET is a 300 V N‑Channel enhancement mode power transistor built with Fairchild’s planar stripe DMOS technology. It offers low on‑resistance, low gate charge, and fast switching, making it suitable for high‑efficiency DC‑DC converters and switch‑mode power supplies.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, typical performance curves, and package dimensions (TO‑220F). It also includes trademark information, safety notices, and product status definitions.
Fairchild FQPF14N30 specifications
| Drain‑Source Voltage (VDS) | 300 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 8.5 A |
| Pulsed Drain Current (ID) @ 100 °C | 34 A |
| Gate‑Source Voltage (VGS) | ±30 V |
| On‑Resistance (RDS(on)) @ VGS=10 V | 0.299 Ω |
| Typical Gate Charge (Qg) | 30 nC |
| Power Dissipation (PD) @ 25 °C | 50 W |
| Junction‑to‑Case Thermal Resistance | 2.5 °C/W |
| Package | TO‑220F |
All Fairchild FQPF14N30 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQPF14N30?
The device is rated for a maximum drain‑source voltage of 300 V.
What continuous drain current can the FQPF14N30 handle at 25 °C?
It can conduct up to 8.5 A continuously at 25 °C.
What is the maximum continuous drain current rating?
The device can conduct a continuous drain current of 8.5 A at 25 °C.
What is the pulsed drain current capability?
A pulsed drain current of up to 34 A is allowed (see Note 1).