This document describes the features and characteristics of the FQP13N50/FQPF13N50 500V N-Channel MOSFET products, which are produced using Fairchild's proprietary DMOS technology. These products have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts based on half bridge.
This document is a datasheet for the Fairchild Semiconductor FQP13N50 and FQPF13N50 N-Channel enhancement mode power field effect transistors. These devices utilize proprietary planar stripe DMOS technology designed to minimize on-state resistance and provide superior switching performance for applications such as switch mode power supplies and electronic lamp ballasts.
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 12.5 A |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 |
The device has a maximum drain-source voltage rating of 500 V.
The maximum operating and storage temperature range extends up to +150°C.