User Manual
FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance in avalanche and commutation mode. This device is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
User Manual
FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Datasheet
FQP8N60C/FQPF8N60C 600V N-Channel MOSFET is a Fairchild proprietary planar stripe DMOS with low on-state resistance, superior switching performance and high energy pulse tolerance. It is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
