FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild using Fairchild's proprietary planar stripe DMOS technology. It has low on-state resistance, superior switching performance and high energy pulse resistance in avalanche and commutation mode. This device is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
This document describes the Fairchild Semiconductor FQP8N60C/FQPF8N60C, a 600V N-Channel enhancement mode power field effect transistor. These devices utilize proprietary planar stripe DMOS technology to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability.
| Drain-Source Voltage | 600 V |
|---|---|
| Pulsed Drain Current | 30 A |
| On-State Resistance | 1.2 Ω @VGS = 10 V |
| Gate Charge (Typical) | 28 nC |
| Reverse Transfer Capacitance (Typical) | 12 pF |
| Operating Temperature Range | -55 to +150 °C |
The maximum continuous drain current is 7.5 A when the case temperature is 25°C.
The maximum gate-source voltage rating is ±30 V.
The typical total gate charge is 28 nC when the drain-source voltage is 480 V.