Key facts
- Brand
- Fairchild
- Model
- FQP8N90C
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet
The document describes the FQP8N90C/FQPF8N90C devices as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them well-suited for high efficiency switch mode power supplies.
Read onlineFairchild FQP8N90C specifications
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| On‑Resistance (RDS(on)) @ VGS=10 V | 1.92 mΩ |
| Typical Gate Charge (Qg) | 35 nC |
| Reverse Transfer Capacitance (Crss) | 12 pF |
Source: Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum single pulsed avalanche energy rating for this component?
The MOSFET can withstand a single pulsed avalanche energy of up to 850 mJ.
From: Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet
What is the maximum power dissipation rating at an ambient temperature of 25°C?
The maximum power dissipation for this device is 171 W when the case temperature is 25°C.
From: Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet
What is the maximum drain‑source voltage rating?
The MOSFET is rated for a maximum drain‑source voltage of 900 V.
From: Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet
What is the typical gate charge of the device?
The typical gate charge is about 35 nC.
From: Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet