FQP8N60C/FQPF8N60C is a N-channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation using Fairchild's proprietary planar stripe DMOS technology. This advanced technology has been specially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
The FQP8N60C/FQPF8N60C MOSFETs are N‑Channel enhancement mode power transistors built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switched‑mode power supplies, active power factor correction, and electronic lamp ballasts.
Key features include a 600 V drain‑source rating, 7.5 A continuous drain current at 25 °C, low gate charge (≈28 nC), low output capacitance, fast switching, and 100 % avalanche testing. The devices are supplied in TO‑220 and TO‑220F packages and include detailed thermal and electrical characteristics.
| Drain‑Source Voltage (V_DSS) | 600 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 7.5 A |
| Pulsed Drain Current (I_D) (Note 1) | 30 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| On‑Resistance (R_DS(on)) | 1.2 mΩ @ V_GS = 10 V |
| Gate Charge (Q_g) | Typical 28 nC |
| Package Type | TO‑220 / TO‑220F |
The device is rated for a maximum drain‑source voltage of 600 V.
It can conduct up to 7.5 A continuously at a case temperature of 25 °C.
The typical gate charge is 28 nC.
They are available in TO‑220 and TO‑220F surface‑mount packages.