FQP8N60C/FQPF8N60C 600V N-Channel MOSFET is a Fairchild proprietary planar stripe DMOS with low on-state resistance, superior switching performance and high energy pulse tolerance. It is suitable for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
The FQP8N60C and FQPF8N60C are 600 V N‑Channel enhancement mode power MOSFETs fabricated with Fairchild’s planar stripe DMOS technology. The devices are optimized for low on‑state resistance, fast switching, and high‑energy pulse handling, making them suitable for switched‑mode power supplies and active power factor correction circuits.
The datasheet lists absolute maximum ratings, thermal resistance values, detailed electrical characteristics, typical performance curves, and mechanical dimensions for the TO‑220 and TO‑220F packages. Test circuit diagrams illustrate gate‑charge, switching, and diode recovery measurements, while the trademark and disclaimer sections outline Fairchild’s legal notices.
| Drain‑Source Voltage (VDS) | 600 V |
|---|---|
| Continuous Drain Current (25 °C) | 7.5 A |
| Pulsed Drain Current | 30 A |
| Gate‑Source Voltage (VGS) | +30 V |
The maximum drain‑source voltage is 600 V.
It can handle a continuous drain current of 7.5 A at 25 °C.