Key facts
- Brand
- Fairchild
- Model
- FDB060AN08A0
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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FAIRCHILD FDB060AN08A0 FDP060AN08A0 N-Channel PowerTrench MOSFET 75V 80A 6.0m handbook
This document is a datasheet for the Fairchild Semiconductor FDB060AN08A0 and FDP060AN08A0 N-Channel PowerTrench MOSFETs. The devices are rated for 75V drain-to-source voltage and 80A continuous drain current, with a typical on-resistance of 4.8mΩ. They are qualified to AEC Q101 for automotive applications.
Read onlineFairchild FDB060AN08A0 specifications
| Drain to Source Voltage | 75 V |
|---|---|
| Gate to Source Voltage | 42 V |
| Continuous Drain Current (Tc < 127°C) | 80 A |
| Continuous Drain Current (Tc = 25°C) | 16 A |
| Power Dissipation | 255 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.58 °C/W |
| Drain to Source On Resistance | 4.8 mΩ (Typ.) |
Source: FAIRCHILD FDB060AN08A0 FDP060AN08A0 N-Channel PowerTrench MOSFET 75V 80A 6.0m handbook
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
Is this product qualified for the automotive industry?
Yes, the product is qualified to AEC Q101 standards.
From: FAIRCHILD FDB060AN08A0 FDP060AN08A0 N-Channel PowerTrench MOSFET 75V 80A 6.0m handbook
What is the typical gate threshold voltage?
The typical gate threshold voltage is 2V when the drain current is 250µA.
From: FAIRCHILD FDB060AN08A0 FDP060AN08A0 N-Channel PowerTrench MOSFET 75V 80A 6.0m handbook
What are the applications for this MOSFET?
The device is intended for electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and as a primary switch for 24V and 48V systems.
What is the typical on-resistance?
The typical drain to source on resistance (Rds(on)) ranges from 4mΩ to 8mΩ at Vgs = 10V.