Key facts
- Brand
- Fairchild
- Model
- FDB050AN06A0
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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DatasheetFAIRCHILD FDB050AN06A0 FDP050AN06A0 handbook
FAIRCHILD FDB050AN06A0 FDP050AN06A0 handbook
Datasheet
FDB050AN06A0 / FDP050AN06A0 is a N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ product produced by Fairchild Semiconductor Corporation. It has the features of rDS(ON) = 4.3mΩ (Typ.), VGS = 10V, ID = 80A, and is suitable for Motor / Body Load Control applications.
Read onlineFairchild FDB050AN06A0 specifications
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current | 80 A |
| On Resistance | 5 mΩ |
| Total Gate Charge | 61 nC |
| Operating Temperature | -55 to 175 °C |
| Thermal Resistance (Junction to Case) | 0.61 °C/W |
Source: Fairchild FDB050AN06A0/FDP050AN06A0 N-Channel MOSFET Datasheet
All Fairchild FDB050AN06A0 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the operating and storage temperature limits for this MOSFET?
The device is rated to operate and store within a temperature range of -55 to 175 °C.
From: Fairchild FDB050AN06A0/FDP050AN06A0 N-Channel MOSFET Datasheet
What is the maximum single pulse avalanche energy for this component?
The MOSFET can handle a single pulse avalanche energy of up to 470 mJ.
From: Fairchild FDB050AN06A0/FDP050AN06A0 N-Channel MOSFET Datasheet