Key facts
- Brand
- Fairchild
- Model
- FDB050AN06A0
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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Fairchild Semiconductor FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench MOSFET Datasheet
This document is a datasheet for the Fairchild Semiconductor FDB050AN06A0 and FDP050AN06A0 N-Channel PowerTrench MOSFETs. The device is rated for 60V drain-to-source voltage, 80A continuous drain current, and 5mQ on-resistance. It is designed for automotive applications, including motor/body load control, ABS systems, and powertrain management, and is qualified to AEC Q101 standards.
The datasheet provides maximum ratings, electrical characteristics, and typical characteristics including thermal resistance, capacitance, and switching times. It details the device's availability in TO-220AB and TO-263AB packages and includes application circuits and test waveforms for unclamped inductive switching and gate charge.
Fairchild FDB050AN06A0 specifications
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current | 80 A |
| On Resistance | 5 mQ |
| Total Gate Charge | 61 nC |
| Operating Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.61 °C/W |
Source: Fairchild Semiconductor FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What are the operating and storage temperature limits for this MOSFET?
The device is rated to operate and store within a temperature range of -55 to 175 °C.
From: Fairchild FDB050AN06A0/FDP050AN06A0 N-Channel MOSFET Datasheet
What is the maximum single pulse avalanche energy for this component?
The MOSFET can handle a single pulse avalanche energy of up to 470 mJ.
From: Fairchild FDB050AN06A0/FDP050AN06A0 N-Channel MOSFET Datasheet