This document describes the features and characteristics of FDB060AN08A0 / FDP060AN08A0 N-Channel PowerTrench® MOSFET, including its low rDS(ON), low Miller charge, low QRR body diode, UIS capability, etc. The product is suitable for applications such as 42V automotive load control, starter/alternator systems, electronic power steering systems, electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and primary switch for 24V and 48V systems.
This document is a datasheet for the Fairchild Semiconductor FDB060AN08A0 and FDP060AN08A0 N-Channel PowerTrench MOSFETs. The devices are rated for 75V drain-to-source voltage and 80A continuous drain current, with a typical on-resistance of 4.8mΩ. They are qualified to AEC Q101 for automotive applications.
| Drain to Source Voltage | 75 V |
|---|---|
| Gate to Source Voltage | 42 V |
| Continuous Drain Current (Tc < 127°C) | 80 A |
| Continuous Drain Current (Tc = 25°C) | 16 A |
| Power Dissipation | 255 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.58 °C/W |
| Drain to Source On Resistance | 4.8 mΩ (Typ.) |
Yes, the product is qualified to AEC Q101 standards.
The typical gate threshold voltage is 2V when the drain current is 250µA.