This datasheet provides the characteristics of the FDB060AN08A0 / FDP060AN08A0 N-Channel PowerTrench® MOSFET, including rated voltage, rated current, on-resistance, gate-to-source voltage, and gate-to-source voltage.
This document is a technical datasheet for the Fairchild Semiconductor FDP060AN08A0 and FDB060AN08A0 N-Channel PowerTrench MOSFETs. The devices feature low Miller charge, low on-resistance (4-8mΩ typical), and UIS capability, making them suitable for electronic valve train systems, DC-DC converters, off-line UPS units, and distributed power architectures.
| Drain to Source Voltage (Vdss) | 75 V |
|---|---|
| Gate to Source Voltage (Vgs) | 420 V |
| Continuous Drain Current (Tj < 127°C) | 80 A |
| Continuous Drain Current (Tj = 25°C) | 16 A |
| Power Dissipation | 255 W |
| Operating and Storage Temperature Range | -55 to 175 °C |
| Thermal Resistance Junction to Case (TO-220, TO-263) | 0.58 °C/W |
The device is intended for electronic valve train systems, DC-DC converters and off-line UPS, distributed power architectures and VRMs, and as a primary switch for 24V and 48V systems.
The typical drain to source on resistance (Rds(on)) ranges from 4mΩ to 8mΩ at Vgs = 10V.