Key facts
- Brand
- Fairchild
- Model
- FDB13AN06A0
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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FAIRCHILD FDB13AN06A0 FDP13AN06A0 handbook
FDB13AN06A0 / FDP13AN06A0 is a N-Channel PowerTrench® MOSFET produced by Fairchild Semiconductor Corporation. Its features are rDS(ON) = 11.5mΩ (Typ.), Qg(tot) = 22nC (Typ.), Low Miller Charge, Low QRR Body Diode, UIS Capability (Single Pulse and Repetitive Pulse), Qualified to AEC Q101.
Read onlineFairchild FDB13AN06A0 specifications
| Drain to Source Voltage | 60 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Ta = 25°C) | 62 A |
| Continuous Drain Current (Ta = 100°C) | 44 A |
| Power Dissipation | 115 W |
| Operating and Storage Temperature | -55 to 175 °C |
Source: Fairchild Semiconductor FDB13AN06A0/FDP13AN06A0 N-Channel PowerTrench MOSFET Datasheet
All Fairchild FDB13AN06A0 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C with Vgs = 10V is 62 A.
From: Fairchild Semiconductor FDB13AN06A0/FDP13AN06A0 N-Channel PowerTrench MOSFET Datasheet
What is the maximum power dissipation rating for this device?
The maximum power dissipation is rated at 115 W.
From: Fairchild Semiconductor FDB13AN06A0/FDP13AN06A0 N-Channel PowerTrench MOSFET Datasheet