Key facts
- Brand
- STMicroelectronics
- Model
- TIP122
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-08-08
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DatasheetST TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS handbook
ST TIP120/121/122 TIP125/126/127 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS handbook
Datasheet
The TIP120/121/122 TIP125/126/127 are silicon Epitaxial-Base NPN and PNP power transistors from STMicroelectronics, intended for use in power linear and switching applications.
Read onlineSTMicroelectronics TIP122 specifications
| Collector‑Base Voltage (Vcbo) | 60 V (TIP120) – 100 V (TIP122) |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 60 V (TIP120) – 100 V (TIP122) |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 5 A |
| Total Power Dissipation (Pd) | 65 W at Tcase < 25 °C |
| Junction‑to‑Case Thermal Resistance | 1.92 °C/W |
| Storage Temperature Range | -65 °C to 150 °C |
Source: STMicroelectronics TIP120/121/122 and TIP125/126/127 Datasheet
All STMicroelectronics TIP122 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum collector current for these transistors?
The maximum collector current is 5 A.
From: STMicroelectronics TIP120/121/122 and TIP125/126/127 Datasheet
What package are the TIP120‑TIP127 transistors mounted in?
They are mounted in a JEDEC TO‑220 plastic package.
From: STMicroelectronics TIP120/121/122 and TIP125/126/127 Datasheet