The TIP120/121/122 TIP125/126/127 are silicon Epitaxial-Base NPN and PNP power transistors from STMicroelectronics, intended for use in power linear and switching applications.
The document describes the TIP120, TIP121, and TIP122 as NPN silicon Epitaxial-Base power transistors and their PNP counterparts (TIP125, TIP126, TIP127). These devices are configured in a monolithic Darlington arrangement within a JEDEC TO-220 plastic package.
| Collector-Base Voltage (VCBO) | 60 V for TIP120, 80 V for TIP121, 100 V for TIP122 |
|---|---|
| Collector-Emitter Voltage (VCEO) | 60 V for TIP120, 80 V for TIP121, 100 V for TIP122 |
| Collector Current (ICC) | 5 A |
| Operating Junction Temperature (Tj) | 150°C |
The maximum collector current is 5 A.
The maximum operating junction temperature is 150°C.