TIP120/121/122 and TIP125/126/127 are silicon epitaxial-base NPN power transistors with monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intended for use in power linear and switching applications. The complementary PNP types are TIP125, TIP126 and TIP127, respectively.
The TIP120, TIP121, TIP122 (NPN) and TIP125, TIP126, TIP127 (PNP) are silicon epitaxial‑base Darlington power transistors packaged in a JEDEC TO‑220 plastic case. They are intended for linear and switching power applications.
The document lists absolute maximum ratings such as collector‑base voltage up to 100 V, collector current 5 A, total dissipation 65 W, and thermal resistances (junction‑to‑case 1.92 °C/W, junction‑to‑ambient 62.5 °C/W). Mechanical dimensions of the TO‑220 case are also provided.
| Collector‑Base Voltage (Vcbo) | 60 V (TIP120) – 100 V (TIP122) |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 60 V (TIP120) – 100 V (TIP122) |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Collector Current (Ic) | 5 A |
| Total Power Dissipation (Pd) | 65 W at Tcase < 25 °C |
| Junction‑to‑Case Thermal Resistance | 1.92 °C/W |
| Storage Temperature Range | -65 °C to 150 °C |
The maximum collector current is 5 A.
They are mounted in a JEDEC TO‑220 plastic package.
They can be stored from –65 °C up to 150 °C.
The collector‑emitter voltage rating is up to 100 V for the TIP122 and TIP127 types.