MMBF4416 is an N-Channel RF Amplifiers produced by Fairchild Semiconductor Corporation. This document provides the product's absolute maximum ratings, electrical characteristics, off characteristics, on characteristics, small signal characteristics, and functional characteristics.
This document is a datasheet for the MMBF4416, an N-Channel RF Amplifier designed for RF applications. It is manufactured using a 50 process and is available in the SOT-23D package. The device features a gate-source breakdown voltage of 30V and a maximum junction temperature of 150°C.
| Drain-Gate Voltage | 30 V |
|---|---|
| Gate-Source Voltage | -30 V |
| Forward Gate Current | 10 mA |
| Junction Temperature Range | -55 to +150 °C |
| Package Type | SOT-23D |
| Thermal Resistance Junction to Ambient | 556 °C/W |
The device is sourced from process 50.
The maximum junction and storage temperature range is -55 to +150 °C.
The thermal resistance, junction to ambient, is 556 °C/W.