Fairchild FQP8N90C/FQPF8N90C 900V N-Channel MOSFET Datasheet

About this manual

The document describes the FQP8N90C/FQPF8N90C devices as N-Channel enhancement mode power field effect transistors produced using Fairchild's proprietary planar stripe, DMOS technology. These devices are designed to minimize on-state resistance and provide superior switching performance, making them well-suited for high efficiency switch mode power supplies.

What's inside

• General Description
• Absolute Maximum Ratings
• Thermal Characteristics
• Electrical Characteristics
• Typical Characteristics
• Package Dimensions

Specifications

Frequently asked questions

What is the maximum single pulsed avalanche energy rating for this component?

The MOSFET can withstand a single pulsed avalanche energy of up to 850 mJ.

What is the maximum power dissipation rating at an ambient temperature of 25°C?

The maximum power dissipation for this device is 171 W when the case temperature is 25°C.