FQP8N90C/FQPF8N90C N-Channel MOSFET is produced by Fairchild using DMOS technology. The features are low on-state resistance, fast switching, 100% avalanche tested, improved dv/dt capability.
The FQP8N90C and FQPF8N90C are N‑Channel enhancement mode power MOSFETs built with Fairchild’s planar stripe DMOS technology. They are designed for high‑efficiency switch‑mode power supplies and offer low on‑state resistance, fast switching, and robust avalanche performance.
Key features include a 900 V drain‑source rating, 6.3 A continuous drain current at 25 °C, low gate charge (≈35 nC), low reverse transfer capacitance (≈12 pF), and excellent thermal characteristics. The devices are supplied in TO‑220 and TO‑220F packages and are fully avalanche‑tested for reliable operation in demanding applications.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| On‑Resistance (RDS(on)) @ VGS=10 V | 1.92 mΩ |
| Typical Gate Charge (Qg) | 35 nC |
| Reverse Transfer Capacitance (Crss) | 12 pF |
The MOSFET is rated for a maximum drain‑source voltage of 900 V.
The typical gate charge is about 35 nC.
It is offered in TO‑220 and TO‑220F surface‑mount packages.