Key facts
- Brand
- Fairchild
- Model
- FQP13N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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DatasheetFAIRCHILD FQP13N50/FQPF13N50 500V N-Channel MOSFET handbook
FAIRCHILD FQP13N50/FQPF13N50 500V N-Channel MOSFET handbook
Datasheet
This document describes the features and characteristics of the FQP13N50/FQPF13N50 500V N-Channel MOSFET products, which are produced using Fairchild's proprietary DMOS technology. These products have low on-state resistance, superior switching performance, and high energy pulse withstand capability. They are suitable for high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts based on half bridge.
Read onlineFairchild FQP13N50 specifications
| Drain‑Source Voltage (V_DSS) | 500 V |
|---|---|
| Continuous Drain Current (I_D) at 25 °C | 12.5 A |
| Gate Charge (Q_g) | 45 nC (typical) |
| Reverse Transfer Capacitance (C_rss) | 25 pF (typical) |
| Power Dissipation (P_D) at 25 °C | 170 W (FQP13N50), 56 W (FQPF13N50) |
| Thermal Resistance Junction‑to‑Case | 0.74 °C/W (FQP13N50), 2.23 °C/W (FQPF13N50) |
All Fairchild FQP13N50 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the FQP13N50?
The FQP13N50 is rated for a maximum drain‑source voltage of 500 V.
What is the typical gate charge of these MOSFETs?
Both devices have a typical gate charge of about 45 nC.