Key facts
- Brand
- Fairchild
- Model
- FDB6676
- Category
- MOS transistor
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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ManualFAIRCHILD FDP6676S FDB6676S handbook
FAIRCHILD FDP6676S FDB6676S handbook
This document is the datasheet of FDP6676S/FDB6676S, which introduces the features of the product, including product model, package, pin, typical application circuit, characteristic parameters, etc.
Read onlineFairchild FDB6676 specifications
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | ±16 V |
| Continuous Drain Current (ID) | 84 A |
| Total Power Dissipation (PD) | 93 W |
| Junction‑to‑Case Thermal Resistance (RθJC) | 1.6 °C/W |
| Junction‑to‑Ambient Thermal Resistance (RθJA) | 62.5 °C/W |
Source: Fairchild FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET Datasheet
All Fairchild FDB6676 documents by type
Datasheet 1
Ratings, dimensions and ordering codes, for selection and design work.
Other documents 1
Questions answered in these manuals
What is the maximum drain‑source voltage?
The maximum drain‑source voltage is 30 V.
From: Fairchild FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET Datasheet
What is the maximum continuous drain current rating?
The device can handle up to 84 A continuous drain current.
From: Fairchild FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET Datasheet