Key facts
- Brand
- Fairchild
- Model
- FDP6676
- Category
- MOS transistor
- Documents
- 2
- Languages
- EN
- Last added
- 2012-08-07
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Fairchild FDP6676S/FDB6676S Datasheet
This document provides technical specifications for the FDP6676S and FDB6676S devices, which are 30V N-Channel PowerTrench SyncFET MOSFETs designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. The devices feature an integrated Schottky body diode using Fairchild's monolithic SyncFET technology.
Read onlineFairchild FDP6676 specifications
| Drain-Source Voltage | 30 V |
|---|---|
| Continuous Drain Current | 76 A |
| Pulsed Drain Current | 150 A |
| Total Power Dissipation @ To = 25°C | 70 W |
| Operating and Storage Junction Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 1.8 °CiW |
All Fairchild FDP6676 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current rating at 25°C?
The device supports a continuous drain current of 76 A.
How much power can the MOSFET dissipate at an ambient temperature of 25°C?
The total power dissipation is rated at 70 W.
What is the maximum drain‑source voltage?
The maximum drain‑source voltage is 30 V.
From: Fairchild FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET Datasheet
What is the maximum continuous drain current rating?
The device can handle up to 84 A continuous drain current.
From: Fairchild FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET Datasheet