Key facts
- Brand
- Fairchild
- Model
- FQAF17P10
- Industry
- Industrial
- Documents
- 2
- Languages
- EN · ZH
- Last added
- 2012-04-12
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Fairchild FQAF17P10 P-Channel MOSFET Datasheet
The FQAF17P10 is a P‑Channel enhancement‑mode power MOSFET built with Fairchild’s planar stripe DMOS technology. It is optimized for low on‑state resistance, fast switching, and high‑energy pulse capability, making it suitable for audio amplifiers, high‑efficiency DC‑DC converters, and DC motor control.
Key specifications include a -100 V drain‑source rating, -12.4 A continuous drain current at 25 °C, -49.6 A pulsed current, typical on‑resistance of 0.192 Ω at Vgs = ‑10 V, and a maximum junction temperature of 175 °C. The device is supplied in a TO‑3PF package with thermal resistance RθJC of 2.68 °C/W.
Fairchild FQAF17P10 specifications
| Drain‑Source Voltage (VDS) | -100 V |
|---|---|
| Continuous Drain Current (ID) at 25 °C | -12.4 A |
| Pulsed Drain Current (ID,pulse) | -49.6 A |
| Gate‑Source Voltage (VGS) | +30 V |
| On‑Resistance (RDS(on)) typical | 0.192 Ω @ VGS = -10 V |
| Typical Gate Charge (Qg) | 30 nC |
| Reverse Transfer Capacitance (Crss) typical | 100 pF |
| Maximum Junction Temperature (Tj) | 175 °C |
| Thermal Resistance Junction‑to‑Case (RθJC) | 2.68 °C/W |
| Package | TO‑3PF |
All Fairchild FQAF17P10 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage of the FQAF17P10?
The device is rated for a maximum drain‑source voltage of -100 V.
What continuous drain current can the FQAF17P10 handle at 25 °C?
It can handle a continuous drain current of -12.4 A at 25 °C.
What is the maximum drain‑source voltage of the FQAF17P10?
The device can withstand a drain‑source voltage of –100 V.
What is the typical on‑resistance at VGS = –10 V?
Typical RDS(on) is 0.19 Ω at VGS = –10 V.