FQAF13N80 is an N-channel enhancement mode power field effect transistor from Fairchild. It uses Fairchild's proprietary planar stripe DMOS technology and has the advantages of low on-state resistance, high switching performance and high energy pulse endurance. It is suitable for high efficiency switch mode power supplies.
The Fairchild FQAF13N80 is an N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe DMOS technology. It is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes, making it well-suited for high efficiency switch mode power supplies.
The document provides absolute maximum ratings, electrical characteristics including off and on characteristics, dynamic characteristics, and switching parameters. It also includes typical characteristics graphs, test circuit diagrams, and package dimensions for the TO-3PF package. This manual is written in Chinese.
| Drain-Source Voltage | 800 V |
|---|---|
| Continuous Drain Current (TC = 25°C) | 8.0 A |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Package Type | TO-3PF |
The maximum drain-source voltage is 800 V.
Yes, the device is 100% avalanche tested.