This is a FQAF13N80 800V N-Channel MOSFET produced by Fairchild Semiconductor Corporation. It uses the company's proprietary planar stripe, DMOS technology and has low on-state resistance, high switching performance, high surge resistance and fast switching. It is suitable for high efficiency switch mode power supplies.
The FQAF13N80 is an N‑Channel enhancement mode power MOSFET designed with Fairchild’s planar stripe DMOS technology. It offers low on‑state resistance, low gate charge (typical 68 nC), and fast switching suitable for high‑efficiency switch‑mode power supplies.
The datasheet provides absolute maximum ratings, detailed electrical characteristics, typical performance curves, test circuit diagrams, and mechanical dimensions for the TO‑3PF package. It also includes trademark information and product status definitions.
| Drain‑Source Voltage (V_DSS) | 800 V |
|---|---|
| Continuous Drain Current (I_D) @ 25 °C | 8.0 A |
| Pulsed Drain Current (I_D) (Note 1) | 32 A |
| Gate‑Source Voltage (V_GS) | ±30 V |
| Single Pulsed Avalanche Energy (E_AS) | 1100 mJ |
| Power Dissipation (P_D) @ 25 °C | 120 W |
| Thermal Resistance, Junction‑to‑Case (RθJC) | 1.04 °C·W |
| Thermal Resistance, Junction‑to‑Ambient (RθJA) | 40 °C·W |
| Typical Gate Charge (Q_G) | 68 nC |
The device can handle a continuous drain current of 8.0 A at a case temperature of 25 °C.
The MOSFET is rated for a maximum drain‑source voltage of 800 V.
It is supplied in a TO‑3PF package.
Typical gate charge is 68 nC.