Key facts
- Brand
- Fairchild
- Model
- FQAF16N50
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Fairchild FQAF16N50 500V N-Channel MOSFET Datasheet
Datasheet 8 pages · 719 KB · EN
This document provides design specifications and technical data for the FQAF16N50, an N-Channel enhancement mode power MOSFET produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and high energy pulse withstand capability in avalanche and commutation modes.
Read onlineFairchild FQAF16N50 specifications
| Drain-Source Voltage | 500 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 11.3 A |
| Gate Charge (Typical) | 60 nC |
| Reverse Transfer Capacitance (Typical) | 35 pF |
All Fairchild FQAF16N50 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current at 25°C?
The maximum continuous drain current at 25°C is 11.3 A.
What is the maximum drain-source voltage rating?
The maximum drain-source voltage rating is 500 V.
What is the maximum drain‑source voltage of the FQAF16N50?
The maximum drain‑source voltage is 500 V.
What continuous drain current can the FQAF16N50 handle at 25 °C?
It can handle a continuous drain current of 11.3 A at 25 °C.