FQAF11N90C is a N-Channel MOSFET produced by Fairchild Corporation. Its main features are low resistance, high switching performance and high energy pulse, suitable for high efficiency switch mode power supplies.
This document provides the design specifications for the FQAF11N90C, a 900V N-Channel enhancement mode power field effect transistor produced using Fairchild's proprietary planar stripe, DMOS technology. The device is designed to minimize on-state resistance and provide superior switching performance for high efficiency switch mode power supplies.
| Drain-Source Voltage | 900 V |
|---|---|
| Continuous Drain Current (Tj = 25°C) | 7.0 A |
| Continuous Drain Current (Tj = 100°C) | 4.4 A |
| Power Dissipation (Tg = 25°C) | 120 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
The device supports a continuous drain current of 7.0 A at 25°C and 4.4 A at 100°C.
The device can withstand a single pulsed avalanche energy of 960 mJ.
The device operates and stores within a temperature range of -55 to +150 °C.