The FQAF11N90C is a Fairchild N-channel enhancement mode power field effect transistor. This transistor is manufactured using Fairchild's proprietary, planar stripe, DMOS technology. It features a low on-state resistance, superior switching performance, and the ability to withstand high energy pulses in the avalanche and commutation mode. This device is well suited for high efficiency switch mode power supplies.
The Fairchild FQAF11N90C is a 900 V N‑Channel enhancement mode MOSFET designed for high‑efficiency switch‑mode power supplies. It features low gate charge, low output capacitance, fast switching, and robust avalanche capability.
The document provides absolute maximum ratings, electrical characteristics, typical performance curves, package dimensions, and safety notices. It is intended for designers needing detailed specifications for circuit design and reliability analysis.
| Drain‑Source Voltage (VDS) | 900 V |
|---|---|
| Continuous Drain Current (ID) @ 25 °C | 7.0 A |
| Pulsed Drain Current (ID) (Note 1) | 28.0 A |
| Gate‑Source Voltage (VGS) | +30 V |
| Single Pulsed Avalanche Energy | 960 mJ |
| Avalanche Current | 7.0 A |
| Power Dissipation (PD) @ 25 °C | 120 W |
| Thermal Resistance Junction‑to‑Case (RJC) | 1.04 °C/W |
| Thermal Resistance Junction‑to‑Ambient (RJA) | 40 °C/W |
| Package Type | TO‑3PF |
The FQAF11N90C is rated for a maximum drain‑source voltage of 900 V.
It can conduct up to 7.0 A continuously at a case temperature of 25 °C.
The gate‑source voltage is limited to +30 V.
Typical on‑resistance is about 0.91 mΩ at VGS = 10 V and ID = 3.5 A.