Datasheet
FDP51N25 250V N-Channel MOSFET is a 51A, 250V, RDS(on) = 0.060 Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF), fast switching, 100% avalanche tested, improved dv/dt capability N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation.
User Manual
FDP51N25 / FDPF51N25 250V N-Channel MOSFET is a Fairchild N-channel enhancement mode power field effect transistor. It features 51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF). It uses Fairchild’s proprietary, planar stripe, DMOS technology. It has extremely low on-state resistance, superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficient switched mode power supplies and active power factor correction.
