FDP51N25 / FDPF51N25 250V N-Channel MOSFET is a Fairchild N-channel enhancement mode power field effect transistor. It features 51A, 250V, RDS(on) = 0.06Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF). It uses Fairchild’s proprietary, planar stripe, DMOS technology. It has extremely low on-state resistance, superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It is well suited for high efficient switched mode power supplies and active power factor correction.
This document is a datasheet for the Fairchild FDP51N25 and FDPF51N25 UniFET 250V N-Channel MOSFETs. These devices utilize proprietary planar stripe, DMOS technology to minimize on-state resistance and provide superior switching performance. They are well suited for high efficient switched mode power supplies and active power factor correction applications.
| Drain-Source Voltage | 250 V |
|---|---|
| Continuous Drain Current (Tg = 25°C) | 51 A |
| Gate-Source Voltage | +30 V |
| Power Dissipation (Te = 25°C) | 320 38 W |
| Operating and Storage Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.39 °C/W |
| Total Gate Charge | 55 70 nC |