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- Brand
- Fairchild
- Model
- FDPF55N06
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- Industrial
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- Last added
- 2012-08-07
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Fairchild Semiconductor FDP55N06/FDPF55N06 60V N-Channel MOSFET Datasheet
This document is a datasheet for the FDP55N06 and FDPF55N06 60V N-Channel MOSFETs, produced using Fairchild's proprietary UniFET technology. These devices are designed for high-efficiency switched mode power supplies and active power factor correction applications. Key features include a 55A continuous drain current, a low on-resistance of 0.022 Ω, and fast switching capabilities.
Read onlineFairchild FDPF55N06 specifications
| Drain-Source Voltage | 60 V |
|---|---|
| Gate Charge | 30 nC |
| Operating Temperature Range | -55 to +150 °C |
| Package Type | TO-220 / TO-220F |
Source: Fairchild Semiconductor FDP55N06/FDPF55N06 60V N-Channel MOSFET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the typical on-resistance?
The typical static drain-source on-resistance is 0.022 Ω at VGS = 10 V.
From: Fairchild Semiconductor FDP55N06/FDPF55N06 60V N-Channel MOSFET Datasheet
What are the recommended applications?
These devices are well suited for high efficient switched mode power supplies and active power factor correction.
From: Fairchild Semiconductor FDP55N06/FDPF55N06 60V N-Channel MOSFET Datasheet
What are the operating and storage temperature ranges for these devices?
The MOSFETs can operate between -55°C and +150°C, with a maximum lead soldering temperature of 300°C.
From: Fairchild FDP55N06/FDPF55N06 60V N-Channel MOSFET Datasheet
What is the static drain-source on-resistance when the gate-source voltage is 10 V?
The static drain-source on-resistance is 0.022 Ω at a gate-source voltage of 10 V.
From: Fairchild FDP55N06/FDPF55N06 60V N-Channel MOSFET Datasheet