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Fairchild FDP75N08 75V N-Channel MOSFET Datasheet
This document is a datasheet for the Fairchild FDP75N08, a 75V N-Channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe DMOS technology, the device is designed for high-efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts. Key features include a low on-state resistance of 0.011 Ω, low gate charge, and 100% avalanche testing.
Read onlineFairchild FDP75N08 specifications
| Drain-Source Voltage | 75 V |
|---|---|
| Continuous Drain Current (25°C) | 75 A |
| On-Resistance | 0.011 Ω |
| Gate Charge (Typical) | 150 nC |
| Reverse Transfer Capacitance | 85 pF |
| Package Type | TO-220 |
| Operating Temperature Range | -55 to +150 °C |
All Fairchild FDP75N08 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the on-state resistance of the FDP75N08?
The on-state resistance is 0.011 Ω at a gate-source voltage of 10 V.
Is the FDP75N08 avalanche tested?
Yes, the device is 100% avalanche tested.
What is the typical gate charge of the FDP75N08A?
The typical total gate charge is 145nC.
What are the recommended applications for this MOSFET?
It is well suited for high efficient switched mode power supplies, active power factor correction, and electronic lamp ballast based on half bridge topology.