FDP51N25 250V N-Channel MOSFET is a 51A, 250V, RDS(on) = 0.060 Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF), fast switching, 100% avalanche tested, improved dv/dt capability N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation.