FDP51N25 250V N-Channel MOSFET is a 51A, 250V, RDS(on) = 0.060 Ω @VGS = 10 V, low gate charge (typical 55 nC), low Crss (typical 63 pF), fast switching, 100% avalanche tested, improved dv/dt capability N-Channel enhancement mode power field effect transistor produced by Fairchild Semiconductor Corporation.
This document is a datasheet for the Fairchild FDP51N25, a 250V N-Channel enhancement mode power MOSFET. The device utilizes Fairchild's proprietary planar stripe DMOS technology to minimize on-state resistance and provide superior switching performance. It is well-suited for high-efficiency switched mode power supplies and active power factor correction applications.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance characteristics including on-resistance variation, capacitance, and switching times. It also includes a mechanical diagram showing the TO-220 package dimensions and a list of Fairchild trademarks.
| Drain-Source Voltage | 250 V |
|---|---|
| Drain Current - Continuous | 51 A |
| Gate-Source Voltage | +30 V |
| Package Type | TO-220 |
| Operating Temperature Range | -55 to +150 °C |
| Thermal Resistance, Junction-to-Case | 0.39 °C/W |
The maximum continuous drain current at 25°C is 51 A.
The typical gate charge is 55 nC.