FDB13AN06A0/FDP13AN06A0 is a N-channel PowerTrench® MOSFET produced by Fairchild Semiconductor. Its rated voltage is 60V, rated current is 62A, and on-resistance is 13.5mΩ.
This document provides technical specifications for the Fairchild Semiconductor FDB13AN06A0 and FDP13AN06A0 N-Channel PowerTrench MOSFETs. These devices are rated for 60V and 62A continuous drain current, featuring low on-resistance and low Miller charge. They are designed for automotive applications, including motor control, ABS systems, and powertrain management, and are qualified to AEC Q101 standards.
| Drain to Source Voltage | 60 V |
|---|---|
| Gate to Source Voltage | 420 V |
| Continuous Drain Current (Ta = 25°C) | 62 A |
| Continuous Drain Current (Ta = 100°C) | 44 A |
| Power Dissipation | 115 W |
| Operating and Storage Temperature | -55 to 175 °C |
The maximum continuous drain current at 25°C with Vgs = 10V is 62 A.
The maximum power dissipation is rated at 115 W.