This document describes the features and characteristics of the FDB050AN06A0 / FDP050AN06A0 N-Channel PowerTrench® MOSFET product from Fairchild Semiconductor Corporation, including a drain-to-source voltage of 60V, a drain current of 80A, a drain-to-source resistance of 5mΩ, and a low Miller charge and QRR body diode.
This document is a datasheet for the Fairchild Semiconductor FDB050AN06A0 and FDP050AN06A0 N-Channel PowerTrench MOSFETs. These devices are rated for 60V drain-to-source voltage and 80A continuous drain current, with a typical on-resistance of 5mΩ. They are designed for automotive applications, including motor control, ABS systems, and powertrain management, and are qualified to AEC Q101 standards.
| Drain to Source Voltage | 60 V |
|---|---|
| Continuous Drain Current | 80 A |
| On Resistance | 5 mΩ |
| Total Gate Charge | 61 nC |
| Operating Temperature | -55 to 175 °C |
| Thermal Resistance (Junction to Case) | 0.61 °C/W |
The device is rated to operate and store within a temperature range of -55 to 175 °C.
The MOSFET can handle a single pulse avalanche energy of up to 470 mJ.