This article introduces the design guidelines for gate resistance (Rg) of SupreMOS® products in hard switch applications. By optimizing gate drive, higher power conversion efficiency can be achieved. The article also provides the minimum and maximum recommended values of Rg and offers tables for selecting Rg based on different conditions. Additionally, it discusses the considerations for switch losses when using SupreMOS products as replacements for other power MOSFETs.
This document outlines the minimum and maximum recommended values for external series gate resistors (Rg) in hard-switching applications for SupreMOS products. The goal is to balance switching speed against switching losses and mitigate parasitic effects like voltage spikes and EMI. The text explains that Rg values must be selected based on the specific diode type used (SiC, Deuxpeed, or STEALTH2) to control dv/dt during turn-off and to match the switching losses of earlier SuperFET products. This manual is written in Chinese.
| Product Family | SupreMOS |
|---|---|
| Document Revision | REV. 1.0.2 |
| Target Application | Hard switching applications |
The gate resistor Rg is a key control parameter to optimize gate drive design, balancing switching speed and switching losses while managing parasitic effects.
The document recommends using SiC, Deuxpeed, or STEALTH2 diodes as clamp diodes because their characteristics directly affect dv/dt.
If Rg is too small, it can cause excessive dv/dt between the drain and source during the MOSFET turn-off phase.