This document provides gate resistor design guidelines for SupreMOS® MOSFETs. It discusses the minimum and maximum values of gate resistor to achieve optimal performance in hard-switching applications.
This document outlines design guidelines for selecting the external series gate resistor (Rg) for Fairchild SupreMOS MOSFETs. It addresses the trade-off between minimizing switching dv/dt to prevent voltage spikes and maintaining switching efficiency comparable to previous generation SuperFET devices.
The note provides specific minimum Rg values based on dv/dt limits (100V/ns and 50V/ns) for various models under different current conditions. It also includes upper limits for Rg to ensure switching losses do not exceed those of SuperFET MOSFETs or competitors, supported by performance graphs comparing Eon and Eoff against competitor devices.
| Document Revision | 1.0.3 |
|---|---|
| Target Device Series | SupreMOS MOSFETs |
At least 13 Ohms or larger Rg is required.
A 33 Ohm gate resistor achieves similar Eon and Eoff.
Silicon Carbide Schottky barrier diode, Deuxpeed rectifier, and STEALTH2 diodes.