The TPS1101 is a single, low-rDS(on), P-channel, enhancement-mode MOSFET. The device has been optimized for 3-V or 5-V power distribution in battery-powered systems by means of the Texas Instruments LinBiCMOS process. With a maximum VGS(th) of –1.5 V and an IDSS of only 0.5 µA, the TPS1101 is the ideal high-side switch for low-voltage, portable battery-management systems where maximizing battery life is a primary concern. The low rDS(on) and excellent ac characteristics (rise time 5.5 ns typical) of the TPS1101 make it the logical choice for low-voltage switching applications such as power switches for pulse-width-modulated (PWM) controllers or motor/bridge drivers. The ultrathin thin shrink small-outline package or TSSOP (PW) version fits in height-restricted places where other P-channel MOSFETs cannot. The size advantage is especially important where board height restrictions do not allow for an small-outline integrated circuit (SOIC) package. Such applications include notebook computers, personal digital assistants (PDAs), cellular telephones, and PCMCIA cards.
The TPS1101 is a single, low RDS(on) P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It features a maximum gate-to-source voltage of -1.5 V and a low gate current of 0.5 µA, making it ideal for high-side switching in portable battery-management systems. The device is available in D and PW (TSSOP) packages.
Yes, the device features TTL and CMOS compatible inputs.
The typical rise time is 5.5 ns.