The TPS1101 is a single, low RDS(on) P-channel enhancement-mode MOSFET optimized for 3-V or 5-V power distribution in battery-powered systems. It features a maximum VGS(th) of -1.5 V and an IDG of 0.5 A, making it ideal for high-side switching in portable battery-management systems. The device is available in D (SOIC) and PW (Ultrathin TSSOP) packages, with the PW version designed for height-restricted applications.
Yes, the device features TTL and CMOS compatible inputs.
The typical rise time is 5.5 ns.