This product is VNN3NV04P-E, VNS3NV04P-E OMNIFET II fully autoprotected Power MOSFET, which has linear current limitation, thermal shutdown, short circuit protection, integrated clamp, low input current, diagnostic feedback, ESD protection, direct access to MOSFET gate etc.
The VNN3NV04P-E and VNS3NV04P-E are monolithic devices from STMicroelectronics designed in vIPower MO-3 Technology. They are intended for replacement of standard Power MOSFETs in DC up to 50 kHz applications. These devices feature built-in protection mechanisms including thermal shutdown, linear current limitation, and overvoltage clamping to operate safely in harsh environments.
| Operating junction temperature | -55 to 150 °C |
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The operating junction temperature is internally limited, with a storage temperature range of -55 to 150 °C.
Yes, the device includes built-in thermal shutdown, linear current limitation, and overvoltage clamp protection.