The VNN3NV04, VNS3NV04, VND3NV04, VND3NV04-1 are monolithic devices designed in STMicroelectronics™ VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
The document describes the VNN3NV04, VNS3NV04, VND3NV04, and VND3NV04-1 devices, which are monolithic OMNIFET II fully autoprotected Power MOSFETs. These devices utilize STMicroelectronics ViIPower MO0-3 Technology and are designed for replacement of standard Power MOSFETs in DC to 50 kHz applications.
| Reverse DC output current | -5.5 A |
|---|---|
| Total dissipation (SOT-223) | 8 W |
| Operating junction temperature | Internally limited |
| Storage temperature range | -55 to 150 °C |
| Drain current limit (Typ) | 5 A |
The device has an internally limited operating junction temperature.
Yes, it includes thermal shutdown, linear current limitation, and overvoltage clamp to protect the chip.
The input threshold voltage ranges from a minimum of 0.5 V to a maximum of 2.5 V.