This is a high power gain, easy power control, rugged LDMOS transistor, suitable for UHF frequency band communication transmitter applications.
This document is a preliminary specification datasheet for the Philips BLF861, a Silicon N-channel enhancement mode lateral D-MOS push-pull transistor. It is designed for broadband operation in the UHF frequency range, specifically for communication transmitter applications. The device features high power gain, excellent ruggedness, and is packaged in an SOT540A ceramic cap package with the common source connected to the mounting flange.
| Junction temperature | 200 °C |
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No, this document is a preliminary specification and supplementary data may be published later.
The typical power gain is greater than 14 dB at 860 MHz in CW class-AB operation.