BLF861A is a UHF power LDMOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, excellent ruggedness, designed to withstand abrupt load mismatch errors, source on underside eliminates DC isolators, reducing common mode inductance, designed for broadband operation (UHF band), and internal input and output matching for high gain and optimum broadband operation.
This document is a product specification datasheet for the Philips BLF861A, an N-channel enhancement mode lateral D-MOS push-pull transistor designed for broadband operation in the UHF band. The device features high power gain, excellent ruggedness against load mismatch errors, and internal input/output matching optimized for 860 MHz applications.
The datasheet provides quick reference data for RF performance under CW and PAL-BG (TV) class-AB operating conditions at 25°C. It includes limiting values such as a maximum drain-source voltage of 65V and total power dissipation of 318W, along with thermal characteristics like junction-to-mounting-base resistance. Detailed graphs illustrate output capacitance, input impedance, load impedance, power gain, drain efficiency, and intermodulation distortion across the frequency range.
| Output capacitance (Coss) | 40 pF |
|---|---|
| Feedback capacitance (Ciss) | 6 pF |
| Total power dissipation (Ptot) | 318 W |
The transistor is designed for broadband operation in the UHF band, specifically tested at 860 MHz.
The limiting value for the drain-source voltage is a maximum of 65 V.
The total power dissipation is rated up to 318 W when the mounting base temperature is below 25 °C.