Philips BFG198 NPN Wideband Transistor Datasheet

About this manual

This document is a product specification sheet for the BFG198, an NPN planar epitaxial transistor housed in a SOT223 envelope. It is intended specifically for wideband amplifier applications and features high gain and excellent output voltage capabilities.

The datasheet provides comprehensive electrical characteristics, including DC current gain, transition frequency up to 8 GHz, and maximum unilateral power gain. It also details limiting values such as collector-base and collector-emitter voltages, total power dissipation of 1 W, and thermal resistance. The document includes a pinning diagram for the SOT223 package and application circuit information.

What's inside

• Description
• Pinning
• Quick Reference Data
• Limiting Values
• Thermal Characteristics
• Characteristics
• Application Information

Specifications

Frequently asked questions

What is the maximum DC collector current rating for this device?

The maximum DC collector current is 100 mA.