This datasheet provides specifications for the Philips BFG198 NPN transistor, an 8 GHz wideband device intended for amplifier applications.
The document describes the Philips BFG198, an NPN planar epitaxial transistor housed in a plastic SOT223 envelope. It is designed specifically for wideband amplifier applications, featuring high gain and excellent output voltage capabilities. Key performance metrics include a transition frequency (fT) of 8 GHz and maximum unilateral power gain (GUM) up to 18 dB at 500 MHz.
The datasheet details limiting values such as a maximum collector-base voltage of 20 V and a total power dissipation of 1 W. It also includes thermal characteristics, electrical parameters like collector capacitance and feedback capacitance, and graphical data showing performance curves for gain, intermodulation distortion, and S-parameters across the frequency range.
| Package type | SOT223 |
|---|---|
| Collector-base voltage (VCBO) | 20 V |
| Collector-emitter voltage (VCEO) | 10 V |
| DC collector current (IC) | 100 mA |
| Total power dissipation (Ptot) | 1 W |
| Transition frequency (fT) | 8 GHz |
| Maximum unilateral power gain (GUM) @ 500 MHz | 18 dB |
| Storage temperature (Tstg) | -65 to +150 °C |
It is intended for wideband amplifier applications.
The maximum collector-base voltage (VCBO) is 20 V.
The device is in a plastic SOT223 envelope.