Key facts
- Brand
- Infineon
- Model
- SPW32N50C3
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPW32N50C3 Power Transistor Datasheet
The SPW32N50C3 is a high‑voltage, low‑gate‑charge MOSFET offered by Infineon Technologies. The datasheet provides detailed electrical, thermal and switching specifications for designers.
Key sections cover maximum ratings, thermal characteristics, electrical parameters, typical output and transfer characteristics, as well as avalanche and breakdown information. The document also includes safety notices and contact details for Infineon.
Infineon SPW32N50C3 specifications
| Continuous drain current (Id) at 25 °C | 32 A |
|---|---|
| Drain‑source voltage slope (dv/dt) | 50 V/µs |
| Avalanche energy (single pulse) | 1100 mJ |
All Infineon SPW32N50C3 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current?
The device can conduct up to 32 A continuously at a case temperature of 25 °C.
What is the avalanche energy rating for a single pulse?
A single pulse can dissipate up to 1100 mJ of avalanche energy.
What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 32 A.
From: Infineon SPW32N50C3 Cool MOS Power Transistor Datasheet
What is the maximum power dissipation at 25 °C?
The device can dissipate up to 284 W at a case temperature of 25 °C.
From: Infineon SPW32N50C3 Cool MOS Power Transistor Datasheet
What is the maximum continuous drain current at 25 °C?
The maximum continuous drain current at 25 °C is 32 A.
From: Infineon SPW32N50C3 Cool MOS Power Transistor Datasheet
What is the drain‑source breakdown voltage of the SPW32N50C3?
The drain‑source breakdown voltage is rated at 500 V.
From: Infineon SPW32N50C3 Cool MOS Power Transistor Datasheet