Key facts
- Brand
- Infineon
- Model
- BFG235
- Category
- Transistor
- Industry
- Electronics
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-06
Start here
Infineon BFG 235 NPN Silicon RF Transistor Datasheet
Datasheet 6 pages · 111 KB · EN
This document is a technical datasheet for the Infineon Technologies AG BFG 235, an NPN Silicon RF Transistor. It is designed for use as a low-distortion broadband output amplifier stage in antenna and telecommunication systems operating up to 2 GHz at collector currents between 120 mA and 250 mA.
Read onlineInfineon BFG235 specifications
| Collector‑Emitter Voltage (VCEO) | 15 V |
|---|---|
| Collector‑Emitter Voltage (VCES) | 25 V |
| Collector‑Base Voltage (VCBO) | 25 V |
| Emitter‑Base Voltage (VEBO) | 2 V |
| Collector Current (IC) | 300 mA |
| Base Current (IB) | 40 mA |
| Maximum Power Dissipation | 2 W |
| Junction Temperature (Tj) | 150 °C |
| Thermal Resistance (RthJS) | ≤ 35 K/W |
| Transition Frequency (fT) | 5.5 GHz |
| Package Type | SOT‑223 |
All Infineon BFG235 documents by type
Datasheet 2
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What systems is the BFG 235 transistor designed for?
It is intended for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz, as well as power amplifiers for DECT and PCN systems.
What is the maximum collector-emitter voltage rating?
The maximum collector-emitter voltage (VCEO) is rated at 15 V.
What is the maximum collector‑emitter voltage of the BFG235?
The maximum collector‑emitter voltage is 15 V.
What is the transition frequency (fT) of the BFG235?
The transition frequency is 5.5 GHz.