This document describes the features and characteristics of the SPW32N50C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.
The SPW32N50C3 is a high‑voltage, low‑gate‑charge MOSFET offered by Infineon Technologies. The datasheet provides detailed electrical, thermal and switching specifications for designers.
Key sections cover maximum ratings, thermal characteristics, electrical parameters, typical output and transfer characteristics, as well as avalanche and breakdown information. The document also includes safety notices and contact details for Infineon.
| Continuous drain current (Id) at 25 °C | 32 A |
|---|---|
| Drain‑source voltage slope (dv/dt) | 50 V/µs |
| Avalanche energy (single pulse) | 1100 mJ |
The device can conduct up to 32 A continuously at a case temperature of 25 °C.
A single pulse can dissipate up to 1100 mJ of avalanche energy.