Key facts
- Brand
- Infineon
- Model
- SGW30N60
- Category
- power switch
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SGP30N60HS / SGW30N60HS IGBT Module Datasheet
This datasheet provides the electrical, thermal and switching specifications for Infineon's SGP30N60HS (TO‑220) and SGW30N60HS (TO‑247) 600 V IGBT modules. It includes maximum ratings, thermal resistance values, characteristic curves and typical performance graphs.
The document also lists design highlights such as 30 % lower Eo, 10 µs short‑circuit withstand time, operation above 30 kHz, and compliance with RoHS and JEDEC qualifications. Contact information for Infineon Technologies AG is provided at the end of the sheet.
Infineon SGW30N60 specifications
| Collector‑emitter voltage (VCE) | 600 V |
|---|---|
| DC collector current (IC) | 20 A |
| Power dissipation (P_D) | 250 W |
| Short‑circuit withstand time | 10 µs |
| Designed switching frequency | > 30 kHz |
Source: Infineon SGP30N60HS / SGW30N60HS IGBT Module Datasheet
All Infineon SGW30N60 documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the short‑circuit withstand time of the IGBT modules?
The modules can withstand a short circuit for 10 µs.
From: Infineon SGP30N60HS / SGW30N60HS IGBT Module Datasheet
What is the maximum collector‑emitter voltage rating?
The maximum collector‑emitter voltage is 600 V.
From: Infineon SGP30N60HS / SGW30N60HS IGBT Module Datasheet
What is the short‑circuit withstand time of the SGP30N60/SGW30N60?
The devices can withstand a short circuit for 10 µs.
What are the maximum collector‑emitter voltage and continuous collector current?
The maximum collector‑emitter voltage is 600 V and the continuous collector current is 30 A.