Key facts
- Brand
- Infineon
- Model
- SPW20N60CFD
- Industry
- Industrial
- Documents
- 3
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPW20N60CFD Datasheet
This document presents the key electrical characteristics of the Infineon SPW20N60CFD Cool MOS power transistor, including maximum ratings, on‑state resistance, gate charge and avalanche energy. It also details thermal parameters such as junction‑to‑case resistance and transient thermal impedance.
Additional sections cover typical output and transfer characteristics, capacitance values, breakdown voltage curves and safe operating area limits, allowing designers to assess suitability for high‑voltage, high‑current applications.
Infineon SPW20N60CFD specifications
| Continuous drain current (Id) | 20.7 A |
|---|---|
| Pulsed drain current (Id,puls) | 52 A |
| Power dissipation at 25 °C (Pd) | 208 W |
| Thermal resistance junction‑to‑case (Rjc) | 0.6 K/W |
All Infineon SPW20N60CFD documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the SPW20N60CFD?
The device can conduct a continuous drain current of 20.7 A at a case temperature of 25 °C.
How much power can the device dissipate at 25 °C?
It can dissipate up to 208 W when the case temperature is 25 °C.