Key facts
- Brand
- Infineon
- Model
- SPW47N60CFD
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-04-06
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Infineon SPW47N60CFD Product Summary
The SPW47N60CFD is a high‑voltage power transistor from Infineon Technologies. The document provides a product summary, key features, and detailed electrical, thermal and dynamic characteristics for design engineers.
It includes maximum ratings, static and dynamic parameters, gate‑charge data, reverse‑diode characteristics, safe‑operating‑area curves, and package dimensions, along with compliance and warranty notices.
Infineon SPW47N60CFD specifications
| Continuous drain current (Id) at 25 °C | 46 A |
|---|---|
| Pulsed drain current (Id,pulse) at 25 °C | 115 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Gate threshold voltage (Vgs(th)) | 3 V to 5 V |
| Input capacitance (Ciss) | 7700 pF |
| On‑state resistance (Rds(on)) at 25 °C | 0.07 Ω |
Source: Infineon SPW47N60CFD CoolMOS Power Transistor Datasheet
All Infineon SPW47N60CFD documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum continuous drain current of the SPW47N60CFD?
The device can handle a continuous drain current of 46 A at 25 °C.
From: Infineon SPW47N60CFD CoolMOS Power Transistor Datasheet
What is the breakdown voltage of the SPW47N60CFD?
The drain‑source breakdown voltage is rated at 600 V.
From: Infineon SPW47N60CFD CoolMOS Power Transistor Datasheet